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| Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 F BPW 34 FS BPW 34 FS (E9087) feo06075 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 F Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen bei 950 nm q kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher Packungsdichte q BPW 34 FS/(E9087); geeignet fur Vapor-Phase Loten und IR-Reflow Loten Anwendungen q IR-Fernsteuerung von Fernseh- und 1.8 1.4 Approx. weight 0.1 g Features q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 FS/(E9087); suitable for vaporphase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment q Photointerrupters Rundfunkgeraten, Videorecordern, Geratefernsteuerungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb Semiconductor Group 1 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 0.2 0.9 0.7 4.0 3.7 1.7 1.5 0...5 BPW 34 FS Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06863 Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 0.2 0.9 0.7 1.7 1.5 0...5 4.0 3.7 BPW 34 FAS (E9087) Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06916 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type BPW 34 F BPW 34 FS BPW 34 FS (E9087) Bestellnummer Ordering Code Q62702-P929 Q62702-P1604 Q62702-P1826 Semiconductor Group 2 1998-08-27 feo06916 feo06861 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 85 32 150 Einheit Unit C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Symbol Symbol Wert Value 50 ( 40) Einheit Unit A S S max 950 780 ... 1100 nm nm A LxB LxW 7.00 2.65 x 2.65 mm2 mm x mm 60 2 ( 30) 0.59 0.77 330 ( 275) Grad deg. nA A/W Electrons Photon mV IR S VO Semiconductor Group 3 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Kennwerte (TA = 25 C, = 950 nm) Characteristics (cont'd) Bezeichnung Description Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Symbol Symbol Wert Value 25 20 Einheit Unit A ns ISC tr, tf VF C0 TCV TCI NEP 1.3 72 - 2.6 0.18 4.3 x 10- 14 V pF mV/K %/K W Hz cm * Hz W D* 6.2 x 1012 Semiconductor Group 4 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Relative spectral sensitivity Srel = f () 100 OHF00368 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) P Total power dissipation Ptot = f (TA) 10 4 mV 160 mW Ptot 140 120 100 OHF00958 S rel % 80 A 10 3 OHF01097 10 2 10 3 VO 60 10 1 40 10 0 20 10 2 80 60 P 10 1 40 20 0 700 800 900 1000 nm 1200 10 -1 0 10 10 1 10 2 W/cm 2 Ee 10 10 4 0 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 R pA C pF 80 R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 10 -1 0 20 40 60 VR 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 5 1998-08-27 |
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